2SC2714-Y(TE85L,F)

lang_0872 :

Toshiba Electronic Devices and Storage Corporation

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

20mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA, 6V

Frequency - Transition :

550MHz

Gain :

23dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

2.5dB @ 100MHz

Operating Temperature :

125°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

100mW

Product Status :

Active

Supplier Device Package :

S-Mini

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

30V