2324-20

lang_0872 :

Microsemi

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

3A

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 160mA, 5V

Frequency - Transition :

2.3GHz ~ 2.4GHz

Gain :

7dB

Mounting Type :

Chassis Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

200°C

Package / Case :

55AW

Power - Max :

58W

Product Status :

Obsolete

Supplier Device Package :

55AW

Transistor Type :

-

Voltage - Collector Emitter Breakdown (Max) :

40V