ATP212-TL-H

lang_0872 :

onsemi

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

35A (Ta)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

4V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

34.5 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1820 pF @ 20 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

ATPAK (2 leads+tab)

Power Dissipation (Max) :

40W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

23mOhm @ 18A, 10V

Supplier Device Package :

ATPAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

-