F4100R06KL4BOSA1

lang_0872 :

Infineon Technologies

Категория товара :

Discrete Semiconductor Products > Transistors - IGBTs - Modules

Configuration :

Half Bridge

Current - Collector (Ic) (Max) :

130 A

Current - Collector Cutoff (Max) :

5 mA

IGBT Type :

-

Input :

Standard

Input Capacitance (Cies) @ Vce :

4.3 nF @ 25 V

Mounting Type :

Chassis Mount

NTC Thermistor :

Yes

Operating Temperature :

-40°C ~ 125°C

Package / Case :

Module

Power - Max :

430 W

Product Status :

Obsolete

Supplier Device Package :

Module

Vce(on) (Max) @ Vge, Ic :

2.55V @ 15V, 100A

Voltage - Collector Emitter Breakdown (Max) :

600 V