TDTC144E,LM

Hersteller-Teilenummer
TDTC144E,LM
Hersteller
Toshiba Electronic Devices and Storage Corporation
Paket/Karton
-
Datenblatt
TDTC144E,LM
Beschreibung
PB-F BIAS RESISTOR BUILT-IN TRAN
Lagerbestand
35000

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Hersteller :
Toshiba Electronic Devices and Storage Corporation
Produktkategorie :
Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased
Current - Collector (Ic) (Max) :
100 mA
Current - Collector Cutoff (Max) :
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce :
77 @ 5mA, 5V
Frequency - Transition :
250 MHz
Mounting Type :
Surface Mount
Package / Case :
TO-236-3, SC-59, SOT-23-3
Power - Max :
320 mW
Product Status :
Active
Resistor - Base (R1) :
47 kOhms
Resistor - Emitter Base (R2) :
-
Supplier Device Package :
SOT-23-3
Transistor Type :
NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic :
300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max) :
50 V
Datenblätter
TDTC144E,LM

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