PDTC114EK,135

Hersteller :

NXP Semiconductors

Produktkategorie :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

1µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA, 5V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

250 mW

Product Status :

Obsolete

Resistor - Base (R1) :

10 kOhms

Resistor - Emitter Base (R2) :

10 kOhms

Supplier Device Package :

SMT3; MPAK

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

50 V