DTD114ESTP

Hersteller :

ROHM Semiconductor

Produktkategorie :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

500 mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 50mA, 5V

Frequency - Transition :

200 MHz

Mounting Type :

Through Hole

Package / Case :

SC-72 Formed Leads

Power - Max :

300 mW

Product Status :

Obsolete

Resistor - Base (R1) :

10 kOhms

Resistor - Emitter Base (R2) :

10 kOhms

Supplier Device Package :

SPT

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

50 V