GT30J341,Q

Hersteller-Teilenummer
GT30J341,Q
Hersteller
Toshiba Electronic Devices and Storage Corporation
Paket/Karton
-
Datenblatt
GT30J341,Q
Beschreibung
IGBT TRANS 600V 30A TO3PN
Lagerbestand
35000

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Hersteller :
Toshiba Electronic Devices and Storage Corporation
Produktkategorie :
Discrete Semiconductor Products > Transistors - IGBTs - Single
Current - Collector (Ic) (Max) :
59 A
Current - Collector Pulsed (Icm) :
120 A
Gate Charge :
-
IGBT Type :
-
Input Type :
Standard
Mounting Type :
Through Hole
Operating Temperature :
175°C (TJ)
Package / Case :
TO-3P-3, SC-65-3
Power - Max :
230 W
Product Status :
Active
Reverse Recovery Time (trr) :
50 ns
Supplier Device Package :
TO-3P(N)
Switching Energy :
800µJ (on), 600µJ (off)
Td (on/off) @ 25°C :
80ns/280ns
Test Condition :
300V, 30A, 24Ohm, 15V
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 30A
Voltage - Collector Emitter Breakdown (Max) :
600 V
Datenblätter
GT30J341,Q

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