GT30J121(Q)
- Hersteller-Teilenummer
- GT30J121(Q)
- Paket/Karton
- -
- Datenblatt
- GT30J121(Q)
- Beschreibung
- IGBT 600V 30A 170W TO3PN
- Lagerbestand
- 35000
Angebot anfordern (RFQ)
- * Kontaktname:
- * Unternehmen:
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- * Captcha:
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- Hersteller :
- Toshiba Electronic Devices and Storage Corporation
- Produktkategorie :
- Discrete Semiconductor Products > Transistors - IGBTs - Single
- Current - Collector (Ic) (Max) :
- 30 A
- Current - Collector Pulsed (Icm) :
- 60 A
- Gate Charge :
- -
- IGBT Type :
- -
- Input Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature :
- -
- Package / Case :
- TO-3P-3, SC-65-3
- Power - Max :
- 170 W
- Product Status :
- Active
- Reverse Recovery Time (trr) :
- -
- Supplier Device Package :
- TO-3P(N)
- Switching Energy :
- 1mJ (on), 800µJ (off)
- Td (on/off) @ 25°C :
- 90ns/300ns
- Test Condition :
- 300V, 30A, 24Ohm, 15V
- Vce(on) (Max) @ Vge, Ic :
- 2.45V @ 15V, 30A
- Voltage - Collector Emitter Breakdown (Max) :
- 600 V
- Datenblätter
- GT30J121(Q)
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