Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C：
-
- Drain to Source Voltage (Vdss)：
-
- FET Feature：
-
- FET Type：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
- Mounting Type：
-
- Operating Temperature：
-
- Package / Case：
-
- Power - Max：
-
- Product Status：
-
- Rds On (Max) @ Id, Vgs：
-
| 画像 | パート | メーカー | 説明 | 価格 | 在庫 | アクション | |
|---|---|---|---|---|---|---|---|
|
EPC Space | GAN FET HEMT200V 4A... |
-
|
41
In-stock
|
見積もりを取得 | ||
|
|
Microchip Technology | PM-MOSFET-SIC-SBD... |
-
|
6
In-stock
|
見積もりを取得 | ||
|
|
Microchip Technology | PM-MOSFET-SIC-SBD... |
-
|
35,000
In-stock
|
見積もりを取得 | ||
|
|
Microchip Technology | PM-MOSFET-SIC-SBD... |
-
|
35,000
In-stock
|
見積もりを取得 | ||
|
|
Microchip Technology | PM-MOSFET-SIC-SBD... |
-
|
35,000
In-stock
|
見積もりを取得 | ||
|
|
Microchip Technology | PM-MOSFET-SIC-SBD... |
-
|
35,000
In-stock
|
見積もりを取得 | ||
|
|
Microchip Technology | PM-MOSFET-SIC-SBD... |
-
|
35,000
In-stock
|
見積もりを取得 | ||
|
|
Microchip Technology | PM-MOSFET-SIC-SBD... |
-
|
35,000
In-stock
|
見積もりを取得 | ||
|
|
Microchip Technology | PM-MOSFET-SIC-SBD... |
-
|
35,000
In-stock
|
見積もりを取得 | ||
|
|
Microchip Technology | PM-MOSFET-SIC-SBD... |
-
|
35,000
In-stock
|
見積もりを取得 | ||
|
|
Nexperia | MOSFET 2P-CH 30V 2.3... |
-
|
35,000
In-stock
|
見積もりを取得 | ||
|
|
Nexperia | MOSFET 2N-CH 30V 8S... |
-
|
35,000
In-stock
|
見積もりを取得 | ||
|
|
ROHM Semiconductor | 4V DRIVE NCH+NCH M... |
-
|
35,000
In-stock
|
見積もりを取得 | ||
|
|
NXP Semiconductors | MOSFET 2N-CH 30V 8S... |
-
|
35,000
In-stock
|
見積もりを取得 |
