Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C:
Drain to Source Voltage (Vdss):
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Power Dissipation (Max):
Rds On (Max) @ Id, Vgs:
画像 パート メーカー 説明 価格 在庫 アクション
TK1K9A60F,S4X Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 600V 3.7...
-
35,000
In-stock
見積もりを取得
TK4A80E,S4X Toshiba Electronic Devices and Storage Corporation
PB-FPOWERMOSFETT...
-
35,000
In-stock
見積もりを取得
1 / 1 Page, 2 Records