Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss)：
-
- Drive Voltage (Max Rds On, Min Rds On)：
-
- FET Feature：
-
- FET Type：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
- Mounting Type：
-
- Operating Temperature：
-
- Package / Case：
-
- Power Dissipation (Max)：
-
- Product Status：
-
- Rds On (Max) @ Id, Vgs：
-
- Supplier Device Package：
-
- Vgs (Max)：
-
32 レコード
| 画像 | パート | メーカー | 説明 | 価格 | 在庫 | アクション | |
|---|---|---|---|---|---|---|---|
|
Vishay | MOSFET P-CH 60V 4.7A... |
-
|
8,358
In-stock
|
見積もりを取得 | ||
|
|
Infineon Technologies | SICFET N-CH 1.2KV 4... |
-
|
89
In-stock
|
見積もりを取得 | ||
|
|
Infineon Technologies | SICFET N-CH 1.2KV 4... |
-
|
169
In-stock
|
見積もりを取得 | ||
|
|
Infineon Technologies | CONSUMER PG-TO252-... |
-
|
2,490
In-stock
|
見積もりを取得 | ||
|
|
PANJIT | 650V SUPER JUNCITO... |
-
|
4,000
In-stock
|
見積もりを取得 | ||
|
|
PANJIT | 650V SUPER JUNCITO... |
-
|
2,000
In-stock
|
見積もりを取得 | ||
|
|
PANJIT | 650V SUPER JUNCITO... |
-
|
6,000
In-stock
|
見積もりを取得 | ||
|
|
Taiwan Semiconductor | MOSFET P-CHANNEL... |
-
|
3,365
In-stock
|
見積もりを取得 | ||
|
|
PANJIT | 650V/ 900MOHM SUPER ... |
-
|
1,980
In-stock
|
見積もりを取得 | ||
|
|
Infineon Technologies | MOSFET N-CH 650V 4.7... |
-
|
966
In-stock
|
見積もりを取得 | ||
|
|
Taiwan Semiconductor | MOSFET P-CHANNEL... |
-
|
35,000
In-stock
|
見積もりを取得 | ||
|
|
Vishay | MOSFET P-CH 150V 4.7... |
-
|
35,000
In-stock
|
見積もりを取得 | ||
|
|
Vishay | MOSFET P-CH 60V 4.7A... |
-
|
600
In-stock
|
見積もりを取得 | ||
|
|
Vishay | MOSFET N-CH 900V 4.7... |
-
|
35,000
In-stock
|
見積もりを取得 | ||
|
|
Infineon Technologies | CONSUMER PG-SOT22... |
-
|
35,000
In-stock
|
見積もりを取得 | ||
|
|
Infineon Technologies | SICFET N-CH 1.2KV 4... |
-
|
35,000
In-stock
|
見積もりを取得 | ||
|
|
Diodes Incorporated | MOSFET P-CH 450V 4.7... |
-
|
35,000
In-stock
|
見積もりを取得 | ||
|
|
Diodes Incorporated | MOSFET BVDSS: 651V... |
-
|
35,000
In-stock
|
見積もりを取得 | ||
|
|
NXP Semiconductors | MOSFET N-CH 30V 4.7A... |
-
|
35,000
In-stock
|
見積もりを取得 |
