Transistors - FETs, MOSFETs - Single
- メーカー:
-
- MDD (1)
- onsemi (5)
- PANJIT (3)
- Rectron USA (2)
- Vishay (3)
- Drain to Source Voltage (Vdss):
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- Drive Voltage (Max Rds On, Min Rds On):
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- FET Feature:
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- FET Type:
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- Gate Charge (Qg) (Max) @ Vgs:
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- Input Capacitance (Ciss) (Max) @ Vds:
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- Mounting Type:
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- Operating Temperature:
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- Package / Case:
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- Power Dissipation (Max):
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- Product Status:
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- Rds On (Max) @ Id, Vgs:
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- Supplier Device Package:
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- Technology:
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48 レコード
画像 | パート | メーカー | 説明 | 価格 | 在庫 | アクション | |
---|---|---|---|---|---|---|---|
Alpha and Omega Semiconductor, Inc. | MOSFET N-CH 30V 5.8A... |
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|
97,675
In-stock
|
見積もりを取得 | |||
Diodes Incorporated | MOSFET N-CH 30V 5.8A... |
-
|
79,010
In-stock
|
見積もりを取得 | |||
PANJIT | SOT-23, MOSFET |
-
|
6,476
In-stock
|
見積もりを取得 | |||
Diodes Incorporated | MOSFET N-CH 30V 5.8A... |
-
|
41,337
In-stock
|
見積もりを取得 | |||
Infineon Technologies | MOSFET N-CH 25V 5.8A... |
-
|
40,559
In-stock
|
見積もりを取得 | |||
Diodes Incorporated | MOSFET P-CH 30V 5.8A... |
-
|
28,207
In-stock
|
見積もりを取得 | |||
onsemi | MOSFET P-CH 20V 5.8A... |
-
|
12,335
In-stock
|
見積もりを取得 | |||
PANJIT | 20V N-CHANNEL ENHA... |
-
|
3,000
In-stock
|
見積もりを取得 | |||
Diodes Incorporated | MOSFET BVDSS: 25V~... |
-
|
2,500
In-stock
|
見積もりを取得 | |||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 650V 5.8... |
-
|
1,294
In-stock
|
見積もりを取得 | |||
MDD | MOSFET SOT-23 N Cha... |
-
|
249,000
In-stock
|
見積もりを取得 | |||
Infineon Technologies | MOSFET N-CH 30V 5.8A... |
-
|
2,691
In-stock
|
見積もりを取得 | |||
PANJIT | SOT-23, MOSFET |
-
|
480
In-stock
|
見積もりを取得 | |||
Diodes Incorporated | MOSFET N-CH 30V 5.8A... |
-
|
35,000
In-stock
|
見積もりを取得 | |||
Infineon Technologies | MOSFET P-CH 30V 5.8A... |
-
|
35,000
In-stock
|
見積もりを取得 | |||
Rectron USA | MOSFET N-CHANNEL... |
-
|
35,000
In-stock
|
見積もりを取得 | |||
Diodes Incorporated | MOSFET BVDSS: 25V~... |
-
|
35,000
In-stock
|
見積もりを取得 | |||
Rectron USA | MOSFET N-CHANNEL... |
-
|
35,000
In-stock
|
見積もりを取得 |