MMDT5451-7-F

メーカー :

Diodes Incorporated

製品カテゴリ :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays

Current - Collector (Ic) (Max) :

200mA

Current - Collector Cutoff (Max) :

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA, 5V / 60 @ 10mA, 5V

Frequency - Transition :

300MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-TSSOP, SC-88, SOT-363

Power - Max :

200mW

Product Status :

Active

Supplier Device Package :

SOT-363

Transistor Type :

NPN, PNP

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA, 500mV @ 5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

160V, 150V