BD649-S

メーカー :

Bourns, Inc.

製品カテゴリ :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

8 A

Current - Collector Cutoff (Max) :

500µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 3A, 3V

Frequency - Transition :

-

Mounting Type :

Through Hole

Operating Temperature :

-65°C ~ 150°C (TJ)

Package / Case :

TO-220-3

Power - Max :

2 W

Product Status :

Obsolete

Supplier Device Package :

TO-220

Transistor Type :

NPN - Darlington

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 50mA, 5A

Voltage - Collector Emitter Breakdown (Max) :

100 V