HGTG10N120BND
- メーカー部品番号
- HGTG10N120BND
- メーカー
- onsemi
- パッケージ/ケース
- -
- データシート
- HGTG10N120BND
- 説明
- IGBT NPT 1200V 35A TO247-3
- 在庫
- 2165
見積依頼(RFQ)
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- * 会社:
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- メーカー :
- onsemi
- 製品カテゴリ :
- Discrete Semiconductor Products > Transistors - IGBTs - Single
- Current - Collector (Ic) (Max) :
- 35 A
- Current - Collector Pulsed (Icm) :
- 80 A
- Gate Charge :
- 100 nC
- IGBT Type :
- NPT
- Input Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-247-3
- Power - Max :
- 298 W
- Product Status :
- Last Time Buy
- Reverse Recovery Time (trr) :
- 70 ns
- Supplier Device Package :
- TO-247-3
- Switching Energy :
- 850µJ (on), 800µJ (off)
- Td (on/off) @ 25°C :
- 23ns/165ns
- Test Condition :
- 960V, 10A, 10Ohm, 15V
- Vce(on) (Max) @ Vge, Ic :
- 2.7V @ 15V, 10A
- Voltage - Collector Emitter Breakdown (Max) :
- 1200 V
- データシート
- HGTG10N120BND
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