G33N03D3

제조업체 부품 번호
G33N03D3
제조업체
Goford Semiconductor
포장/케이스
-
데이터시트
G33N03D3
설명
N30V,RD(MAX)<12M@10V,RD(MAX)<13M
재고
5000

견적 요청(RFQ)

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제조업체 :
Goford Semiconductor
제품 분류 :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
30A (Tc)
Drain to Source Voltage (Vdss) :
30V
FET Feature :
Standard
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1530pF @ 15V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-PowerVDFN
Power - Max :
18.5W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
13mOhm @ 18A, 10V
Supplier Device Package :
8-DFN (3x3)
Vgs(th) (Max) @ Id :
2.5V @ 250µA
데이터 목록
G33N03D3

제조업체 관련 제품

  • Goford Semiconductor
    P+P -30V,RD(MAX)<60M@-10V,RD(MAX
  • Goford Semiconductor
    N60V, 5A,RD<35M@10V,VTH1V~2.5V,
  • Goford Semiconductor
    P-30V, -9A,RD<18M@-10V,VTH-1V~-2
  • Goford Semiconductor
    NP60V, 5A/-3.1A,RD<36M/80M@10V/-
  • Goford Semiconductor
    N60V,RD(MAX)<30M@10V,RD(MAX)<40M

디렉토리 관련 제품

  • EPC
    GANFET 2NCH 120V 3.4A DIE
  • EPC
    GAN TRANS SYMMETRICAL HALF BRIDG
  • ROHM Semiconductor
    MOSFET 2N-CH 1200V 300A
  • Toshiba Electronic Devices and Storage Corporation
    MOSFET 2 N-CHANNEL 20V 250MA US6
  • Diodes Incorporated
    MOSFET N/P-CH 20V SOT26

관련 제품

부분 제조업체 재고 설명
G33N03D52 Goford Semiconductor 5,000 N30V, 33A,RD<13M@10V,VTH1V~3V, D
G33N03S Goford Semiconductor 3,995 N30V,RD(MAX)<12M@10V,RD(MAX)<13M