G33N03D52

제조업체 부품 번호
G33N03D52
제조업체
Goford Semiconductor
포장/케이스
-
데이터시트
G33N03D52
설명
N30V, 33A,RD<13M@10V,VTH1V~3V, D
재고
5000

견적 요청(RFQ)

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제조업체 :
Goford Semiconductor
제품 분류 :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
33A (Tc)
Drain to Source Voltage (Vdss) :
30 V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
782 pF @ 15 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
DFN5*6
Power Dissipation (Max) :
29W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
13mOhm @ 16A, 10V
Supplier Device Package :
DFN5*6
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
3V @ 250µA
데이터 목록
G33N03D52

제조업체 관련 제품

  • Goford Semiconductor
    P+P -30V,RD(MAX)<60M@-10V,RD(MAX
  • Goford Semiconductor
    N60V, 5A,RD<35M@10V,VTH1V~2.5V,
  • Goford Semiconductor
    P-30V, -9A,RD<18M@-10V,VTH-1V~-2
  • Goford Semiconductor
    N30V,RD(MAX)<12M@10V,RD(MAX)<13M
  • Goford Semiconductor
    NP60V, 5A/-3.1A,RD<36M/80M@10V/-

디렉토리 관련 제품

관련 제품

부분 제조업체 재고 설명
G33N03D3 Goford Semiconductor 5,000 N30V,RD(MAX)<12M@10V,RD(MAX)<13M
G33N03S Goford Semiconductor 3,995 N30V,RD(MAX)<12M@10V,RD(MAX)<13M